Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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===Problems with resists stripping | ===Problems with resists stripping after etching=== | ||
Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the currect will chance the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact [mailto:kristian.rasmussen@nanotech.dtu.dk Kristian Hagsted Rasmussen]. | Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the currect will chance the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact [mailto:kristian.rasmussen@nanotech.dtu.dk Kristian Hagsted Rasmussen]. | ||
===Design of Experiment results=== | ===Design of Experiment results=== | ||