Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
| Line 186: | Line 186: | ||
==Defocus== | ==Defocus== | ||
'''Optical:''' Varies greatly with resist type and thickness. Probably also dependent on substrate. | '''Optical:''' Varies greatly with resist type and thickness, see [[/Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Process_Parameters|Process Parameters]]. Probably also dependent on substrate. | ||
'''Pneumatic:''' Probably similar for resists of similar thickness, and not likely to vary with substrate. For 375nm exposure, the optimum seems to be around -15 (). | '''Pneumatic:''' Probably similar for resists of similar thickness, and not likely to vary with substrate. For 375nm exposure, the optimum seems to be around -15 ([[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Large_defocus_range|Large defocus range]). | ||
==Exposure mode== | ==Exposure mode== | ||