Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
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*Standard: No resist template or any normal resist template | *Standard: No resist template or any normal resist template | ||
*Large: 'NLAB High AR | *Large: 'NLAB High AR mode Large' | ||
*X-Large: 'NLAB High AR | *X-Large: 'NLAB High AR mode XL' | ||
Decreasing the aperture size significantly reduces the amount of light that reaches the sample, and thus the effective dose, as can be seen in the graph to the right, and the table below. The resolution limit, however, seem to be much less affected. Tests using 1.5µm MiR resist suggest that using the X-Large setting (60 steps) reduces the achievable resolution from 1µm at Standard setting to 3µm for exposure at 375nm, but only to 1.75µm for exposure at 405nm. | Decreasing the aperture size significantly reduces the amount of light that reaches the sample, and thus the effective dose, as can be seen in the graph to the right, and the table below. The resolution limit, however, seem to be much less affected. Tests using 1.5µm MiR resist suggest that using the X-Large setting (60 steps) reduces the achievable resolution from 1µm at Standard setting to 3µm for exposure at 375nm, but only to 1.75µm for exposure at 405nm. | ||