Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å | *Si<sub>3</sub>N<sub>4</sub>: ~50Å - ~3000Å | ||
*SRN: ~50Å - ~10000Å | *SRN: ~50Å - ~10000Å | ||
Thick layers have to be deposited over more runs | |||
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|style="background:LightGrey; color:black"|Step coverage | |style="background:LightGrey; color:black"|Step coverage | ||
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*Few defects | *Few defects | ||
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|style="background:LightGrey; color:black"| | |style="background:LightGrey; color:black"|Film uniformity | ||
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New nitride furnace: | New nitride furnace: | ||
*Uniformity within wafer: ~ 3% | *Uniformity within wafer: ~ 3-4 % | ||
*Wafer-to-wafer uniformity: ~ 3% | *Wafer-to-wafer uniformity: ~ 3-5 % | ||
*Run-to-run uniformity: ~ 3% | *Run-to-run uniformity: ~ 3 % | ||
Old nitride furnace: | Old nitride furnace: | ||
* | * | ||
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*Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): 10-120 sccm | *Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): 10-120 sccm | ||
*Ammonia (NH<math>_3</math>): 10-75 sccm | *Ammonia (NH<math>_3</math>): 10-75 sccm | ||
The gas flows | The gas flows depend on the actual process | ||
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!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates | ||