Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
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==Deposition of Silicon Nitride using PECVD== | ==Deposition of Silicon Nitride using PECVD== | ||
PECVD nitride and oxynitride can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be of importance for some applications, but it gives a less dense film, and the stoichiometry is on the following form: Si<sub>x</sub>N<sub>y</sub>O<sub>z</sub>H<sub>v</sub>. The step coverage and thickness uniformity of the film | PECVD nitride and oxynitride can be deposited in one of the [[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] systems. You can run 1-3 wafers at a time depending on which one of the PECVD's you use. The deposition takes place at 300 degrees Celcius. This can be of importance for some applications, but it gives a less dense film, and the stoichiometry is on the following form: Si<sub>x</sub>N<sub>y</sub>O<sub>z</sub>H<sub>v</sub>. The step coverage and the thickness uniformity of the film are not as good as for the LPCVD nitride. In one of our PECVD systems (PECVD3) we allow small amounts of metal on the wafers entering the system; this is not allowed in the LPCVD furnace and in the clean PECVD (PECVD1). We also have a PECVD for deposition on III-V materials (PECVD2). | ||
*[[/Deposition of Silicon Nitride using PECVD|Deposition of silicon nitride using PECVD]] - ''or oxynitride'' | *[[/Deposition of Silicon Nitride using PECVD|Deposition of silicon nitride using PECVD]] - ''or oxynitride'' | ||