Specific Process Knowledge/Etch/III-V RIE: Difference between revisions
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*SiO<sub>2</sub>: ~1-30 nm/min | *SiO<sub>2</sub>: ~1-30 nm/min | ||
*Si<sub>3</sub> | *Si<sub>3</sub>N<sub>4</sub>: ~17-38 nm/min | ||
*BCB: ~70-880 nm/min (needs testing) | *BCB: ~70-880 nm/min (needs testing) | ||
*Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214) | *Resist: ~30-98 nm/min (AZ5206 and ZEP520A), ~70-815 nm/min (AZ5214) | ||