Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

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Jipelec - Rapid Thermal Processing

The Jipelec is a rapid thermal processing (RTP) oven. It is be used for fast and well-controlled annealing or alloying of samples. It is possible to use either a thermocouple or a pyrometer to control the temperature (of the sample carrier).

The user manual, technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose		RTP annealing
Process parameter range	Process Temperature	0-1100 ^oC III-V materials only to 450 ^oC Temperature ramp up to 300 ^oC/min
	Process pressure	1 atm Vacuum
	Gases on the system	N₂
Substrates	Batch size	One 50 mm or 100 mm wafer Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide)
Substrates	Substrate materials allowed	A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used Silicon Silicon oxide Silicon nitride Fused silica/quartz Polysilicon III-V materials (on graphite carrier, max 450 ^oC) Some metals - Ask the Thin Film group for permission

@@ Line 25: / Line 25: @@
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*0-1000 <sup>o</sup>C
+*0-1100 <sup>o</sup>C
 *III-V materials only to 450 <sup>o</sup>C
 *Temperature ramp up to 300 <sup>o</sup>C/min
@@ Line 35: / Line 35: @@
 *Vacuum
 |-
-|style="background:LightGrey; color:black"|Gasses on the system
+|style="background:LightGrey; color:black"|Gases on the system
 |style="background:WhiteSmoke; color:black"|
@@ Line 43: / Line 43: @@
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*One 100 mm wafer (or 50 wafer) per run
+*One 50 mm or 100 mm wafer
 *Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide)
 |-
-| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-A silicon carrier wafer with 1 µm oxide is always need (except for III-V materials)
+A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used
 *Silicon
-*Silicon oxides
+*Silicon oxide
-*Silicon nitrides
+*Silicon nitride
-*Quartz
+*Fused silica/quartz
 *Polysilicon
-*Titan
+*III-V materials (on graphite carrier, max 450 <sup>o</sup>C)
-*III-V materials (on graphite carrier)
+*Some metals - Ask the Thin Film group for permission
-*Silicon wafers (new from the box or RCA cleaned)
-*In doubt: look at [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=164 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group].
 |-
 |}