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Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

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|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
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*0-1000 <sup>o</sup>C
*0-1100 <sup>o</sup>C
*III-V materials only to 450 <sup>o</sup>C
*III-V materials only to 450 <sup>o</sup>C
*Temperature ramp up to 300 <sup>o</sup>C/min
*Temperature ramp up to 300 <sup>o</sup>C/min
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*Vacuum
*Vacuum
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|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gases on the system
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|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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*One 100 mm wafer (or 50 wafer) per run
*One 50 mm or 100 mm wafer  
*Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide)
*Small samples (placed on a carbide carrier or a Si carrier wafer with 1 µm oxide)
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| style="background:LightGrey; color:black"|Substrate material allowed
| style="background:LightGrey; color:black"|Substrate materials allowed
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A silicon carrier wafer with 1 µm oxide is always need (except for III-V materials)
A carrier is always needed: For III-V materials a carbide carrier is used, and for other samples a silicon carrier wafer with 1 µm oxide is used
*Silicon  
*Silicon  
*Silicon oxides
*Silicon oxide
*Silicon nitrides
*Silicon nitride
*Quartz
*Fused silica/quartz
*Polysilicon
*Polysilicon
*Titan
*III-V materials (on graphite carrier, max 450 <sup>o</sup>C)
*III-V materials (on graphite carrier)
*Some metals - Ask the Thin Film group for permission
*Silicon wafers (new from the box or RCA cleaned)
*In doubt: look at [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=164 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group].
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