Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions

← Older edit Newer edit →

VisualWikitext

@@ Line 20: / Line 20: @@
 |
 *Si<sub>3</sub>N<sub>4</sub>
-*SRN
+*SRN (old nitride furnace, only 4" wafers)
-SRN: Silicon Rich Nitride
+Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride
+SRN: Silicon rich nitride (low stress nitride)
 |
 *Si<sub>x</sub>N<sub>y</sub>H<sub>z</sub>
@@ Line 29: / Line 31: @@
 |Film thickness
 |
-*Si<sub>3</sub>N<sub>4</sub>:~50Å - ~3000Å
+*Si<sub>3</sub>N<sub>4</sub>: ~50 Å - ~3000 Å
-*SRN: ~50Å - ~10000Å
+*SRN: ~50 Å - ~10000 Å
+Thick nitride layers can be deposited over more runs
 |
-*~40nm - 10µm
+*~40 nm - 10 µm
 |-
 |Process Temperature
 |
-*800-835 <sup>o</sup>C
+*780 <sup>o</sup>C - 835 <sup>o</sup>C
 |
 *300 <sup>o</sup>C
@@ Line 56: / Line 59: @@
 |Batch size
 |
-*1-25 4" wafer per run
+*1-35 4" wafers per run (old nitride furnace)
-*deposition on both sides of the substrate
+*1-25 4" or 6" wafers per run (new nitride furnace)
+*Deposition on both sides of the substrate
 |
 *1-3 4" wafers or one 6" wafer or many smaller chips per run
-*deposition on one side of the substrate
+*Deposition on one side of the substrate
 |-
-| Substrate material allowed
+| Substrate materials allowed
 |
-*Silicon wafers
+*New or RCA cleaned silicon wafers
 **with layers of silicon oxide or silicon (oxy)nitride
 *Quartz wafers
 |
-*Silicon
+*Silicon wafers
 **with layers of silicon oxide or silicon (oxy)nitride
 *Quartz
 *Small amount of metal < 5% of the wafer coverage (ONLY in PECVD3!)
 |-
-| Etch rate in 80<sup>o</sup>C KOH
+| Etch rate in 80 <sup>o</sup>C KOH
-|Expect <1Å/min
+|Expected <1 Å/min
-|Dependent on recipe: ~1-10Å/min
+|Dependent on recipe: ~1-10 Å/min
 |-
 | Etch rate in BHF