Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride: Difference between revisions
| Line 2: | Line 2: | ||
==Deposition of Silicon Nitride using LPCVD== | ==Deposition of Silicon Nitride using LPCVD== | ||
LPCVD nitride can be made in | LPCVD silicon nitride can be made in a [[Specific Process Knowledge/Thin film deposition/B2 Furnace LPCVD Nitride|LPCVD nitride furnace]]. Danchip has two LPCVD nitride furnaces: One for deposition of stoichiometric nitride on 4 inch or on 6 inch wafers and one for deposition of stoichiometric nitride or low stress nitride on 4 inch wafers. | ||
*[[/Deposition of Silicon Nitride using LPCVD|Deposition of | |||
The LPCVD nitride deposition is a batch process, meaning that you can run a batch of 25-35 wafers at a time. The deposition takes place at temperatures of 780-850 degrees Celsius. The LPCVD silicon nitride has a good step coverage, and the film thickness is very uniform over the wafers. On the furnaces we have standard processes for deposition of stoichiometric nitride (Si<sub>3</sub>N<sub>4</sub>) and for deposition of low stress nitride (SNR). | |||
*[[/Deposition of Silicon Nitride using LPCVD|Deposition of silicon nitride using a LPCVD nitride furnace]] | |||
==Deposition of Silicon Nitride using PECVD== | ==Deposition of Silicon Nitride using PECVD== | ||