Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace: Difference between revisions

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*Annealing of wafers with aluminium
*Annealing of wafers with aluminium
*Oxidation of wafers with aluminium
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
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*N<sub>2</sub>: 0-10 slm
*N<sub>2</sub>: 0-10 slm
*O<sub>2</sub>: 0-10 slm
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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*Silicon wafers with aluminium.
*Silicon wafers with aluminium.
Silicon wafers with ALD oxides Al2O3 and TiO2
*Silicon wafers with ALD oxides Al2O<sub>3<{sub> and TiO<sub>2</sub>
*Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
*Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
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Revision as of 11:53, 28 March 2019

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Aluminium Anneal furnace (C4)

Aluminium Anneal furnace (C4). Positioned in cleanroom B-1

The Aluminium Anneal furnace (C4) is a Tempress horizontal furnace for annealing of silicon wafers with aluminium or ALD oxides Al2O3 and TiO2.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom B-1. In this furnace allowed to process wafers that contain aluminium. Please check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Aluminium Anneal furnace (C4)

Process knowledge

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose
  • Annealing of wafers with aluminium
Process parameter range Process Temperature
  • 400-500 oC
Process pressure
  • 1 atm
Gas flows
  • N2: 0-10 slm
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers)
Substrate materials allowed
  • Silicon wafers with aluminium.
  • Silicon wafers with ALD oxides Al2O3<{sub> and TiO2
  • Wafers are allowed enter the furnace after aluminium lift-off or after aluminium etch and resist strip in acetone
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