Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
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[[Image:section under construction.jpg|70px]] | [[Image:section under construction.jpg|70px]] | ||
==Exposure dose== | |||
[[Image:AZ spectral sensitivity.gif|300x300px|thumb|Spectral sensitivity of AZ resists represented as optical absorption. From http://www.microchemicals.com/]] | |||
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==Defocus== | |||
==Exposure mode== | |||
(high quality, fast) | |||
==Resolution== | |||
*5206E 0.5µm 375nm, dev 2xSP30s | *5206E 0.5µm 375nm, dev 2xSP30s | ||
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Quality: 400mJ/cm<sup>2</sup>; defoc 0 (1µm) | Quality: 400mJ/cm<sup>2</sup>; defoc 0 (1µm) | ||
==Writing speed== | ==Writing speed== | ||
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[[Image:MLA150 speedVSdose.JPG|400x400px|thumb|The writing speed of Aligner: Maskless 02 (Fast mode) as a function of the exposure dose]] | [[Image:MLA150 speedVSdose.JPG|400x400px|thumb|The writing speed of Aligner: Maskless 02 (Fast mode) as a function of the exposure dose]] | ||
<br clear="all" /> | <br clear="all" /> | ||
==Substrate centring and flat alignment== | ==Substrate centring and flat alignment== | ||
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Some special characters are not allowed (e.g. ';'). | Some special characters are not allowed (e.g. ';'). | ||
==High Aspect Ratio mode== | |||
*Intensity vs. aperture (405nm + 375nm) | |||
*Dose test for 1.5µm MiR (405nm + 375nm) | |||
=Alignment= | =Alignment= | ||