Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions
| Line 42: | Line 42: | ||
==High Aspect Ratio Mode== | ==High Aspect Ratio Mode== | ||
*Intensity vs. aperture | *Intensity vs. aperture (405nm + 375nm) | ||
*Dose test for 1.5µm MiR | *Dose test for 1.5µm MiR (405nm + 375nm) | ||
=Alignment= | =Alignment= | ||
Revision as of 10:19, 19 March 2019
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Exposure technology
Process Parameters
- 5206E 0.5µm 375nm (fast + quality)
- 5214E 1.5µm 405nm (fast)
- 5214E 1.5µm 375nm (fast)
- MiR 701 1.5µm 405nm (fast)
- MiR 701 1.5µm 375nm (fast + quality)
- nLOF 2020 2µm 375nm (fast + quality)
Exposure dose
Defocus
Writing speed
- Speed vs. dose (375nm)
- Speed vs. area (375nm)
- Online
- Offline
Resolution
Substrate centring
During (4") substrate detection, the sample is scanned along the X- and Y-axes, as well as diagonally. From these measurements, the diameter of the substrate is calculated, as well as the stage position matching the center of the substrate. This stage position will be the default origin for the subsequent exposure.
Flat alignment
At the end of (4") substrate detection, the sample is scanned twice along the flat, in order to determine the substrate rotation. This angle will be presented in the exposure panel along with the option to expose the design rotated in order to compensate for this angle, i.e. aligned to the flat.
High Aspect Ratio Mode
- Intensity vs. aperture (405nm + 375nm)
- Dose test for 1.5µm MiR (405nm + 375nm)
Alignment