Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 02 processing: Difference between revisions

From LabAdviser
Taran (talk | contribs)
Taran (talk | contribs)
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing click here]'''
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing click here]'''
=THIS PAGE IS UNDER CONSTRUCTION=


=Exposure technology=
=Exposure technology=

Revision as of 10:06, 19 March 2019

Feedback to this page: click here

THIS PAGE IS UNDER CONSTRUCTION

Exposure technology

Process Parameters

Exposure dose

Defocus

Writing speed

  • Speed vs. dose (375nm)
  • Speed vs. area (375nm)

Resolution

Substrate centring

During (4") substrate detection, the sample is scanned along the X- and Y-axes, as well as diagonally. From these measurements, the diameter of the substrate is calculated, as well as the stage position matching the center of the substrate. This stage position will be the default origin for the subsequent exposure.

Flat alignment

At the end of (4") substrate detection, the sample is scanned twice along the flat, in order to determine the substrate rotation. This angle will be presented in the exposure panel along with the option to expose the design rotated in order to compensate for this angle, i.e. aligned to the flat.

Alignment

Stitching

Overlay

Advanced Field alignment