Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
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{| border="1" cellspacing="1" cellpadding="2" align="left" | {| border="1" cellspacing="1" cellpadding="2" align="left" | ||
! | ! Vertical sidewalls | ||
! | ! Low ARDE | ||
! | ! Positive tappered side walls | ||
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| [[Image:WF_2A_n5_jan02_06_1x_100_75.jpg]] | | [[Image:WF_2A_n5_jan02_06_1x_100_75.jpg|250x250px]] | ||
| | |[[Image:WF_2C_n5_nov3_06_1x_100_75.jpg|250x250px]] | ||
| | |[[Image:WF_2D_n6_sep19_05_1x_100_75.jpg|250x250px]] | ||
|- | |- | ||
| | |[[Image:WF_2A_n5_jan02_06_3x_overview.jpg|250x250px]] | ||
| | |[[Image:WF_2C_n5_nov3_06_overview.jpg|250x250px]] | ||
| | |[[Image:WF_2D_n6_sep19_05_1x_overview.jpg|250x250px]] | ||
|- | |- | ||
| | | | ||
Etch cycle | |||
SF6 flow [sccm]:50 | |||
C4F8 flow [sccm]:100 | |||
Pressure [mTorr] 20 | |||
Coil power [W]: 350 | |||
Platen power [W]: 30 | |||
Cycle Time [s]: 5 | |||
Dep. Cycle | |||
C4F8 flow [sccm]: 100 | |||
Pressure [mTorr]: 20 | |||
Coil power [W]: 500 | |||
Platen power [W]: 0 | |||
Cycle Time [s]: 3 | |||
Temperature [Deg. C] 20 | |||
| | | | ||
Etch cycle | |||
SF6 flow [sccm]:50 | |||
C4F8 flow [sccm]:100 | |||
Pressure [mTorr] 10 | |||
Coil power [W]: 350 | |||
Platen power [W]: 30 | |||
Cycle Time [s]: 5 | |||
Dep. Cycle | |||
C4F8 flow [sccm]: 100 | |||
Pressure [mTorr]: 10 | |||
Coil power [W]: 500 | |||
Platen power [W]: 0 | |||
Cycle Time [s]: 3 | |||
Temperature [Deg. C] -10 | |||
| | | | ||
Etch cycle | |||
SF6 flow [sccm]:50 | |||
C4F8 flow [sccm]:100 | |||
Pressure [mTorr] 10 | |||
Coil power [W]: 350 | |||
Platen power [W]: 10 | |||
Cycle Time [s]: 5 | |||
Dep. Cycle | |||
C4F8 flow [sccm]: 100 | |||
Pressure [mTorr]: 10 | |||
Coil power [W]: 500 | |||
Platen power [W]: 0 | |||
Cycle Time [s]: 3 | |||
Temperature [Deg. C] 20 | |||
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