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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,531 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,531 edits
Line 533: Line 533:
''Sequence names, process parameters, and test results (Sequence no. 4000-4999):''
''Sequence names, process parameters, and test results (Sequence no. 4000-4999):''
*'''(4405) 100mm 5206E 0,5um HMDS'''
*'''(4405) 100mm 5206E 0,5um HMDS'''
Spin-off: 2200? rpm.
Spin-off: 2200 rpm, but likely to change with each new mix of resist.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
Line 548: Line 548:
|Silicon with native oxide
|Silicon with native oxide
|0.49 µm
|0.49 µm
|0.4%
|0.9%
|19/3 2018?
|23/4 2018?
|taran
|taran
|4" wafer, no HMDS. 9 points measured, exclusion zone 5mm.
|4" wafer, no HMDS, 2200 rpm. 9 points measured, exclusion zone 5mm.
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
Line 559: Line 559:
|30/1 2019
|30/1 2019
|taran
|taran
|4" wafer, with HMDS. 9 points measured, exclusion zone 5mm.
|4" wafer, with HMDS, 2200? rpm. 9 points measured, exclusion zone 5mm.
|}
|}
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