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Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions

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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,531 edits
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!SECTION UNDER CONSTRUCTION!
!SECTION UNDER CONSTRUCTION!


Spin coating of AZ 5206E (AZ 5214E 1:1 by volume in PGMEA) dispensed from syringe on Spin Coater: Gamma UV is divided into two steps: Spin coating, and soft baking. The spin coating uses dynamic dispense of resist at 300 rpm, using a volume of 1.5 ml for 100 mm substrates. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds with backside rinse. The wafer dried at 800 rpm for 15s before stopping. Soft baking is done at 90°C in 1 mm proximity for a thickness dependent time. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask.
Spin coating of AZ 5206E (AZ 5214E 1:1 by volume in PGMEA) dispensed from syringe on Spin Coater: Gamma UV is divided into three steps: HMDS priming, spin coating, and soft baking. The HMDS priming is equal to the ''HMDS fast'' process. The spin coating uses dynamic dispense of resist at 800? rpm, using a volume of 1.5 ml for 100 mm substrates. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds. The thickness range is approximately 0.4-0.6µm. Soft baking is done at 90°C for 60s.


''Sequence names, process parameters, and test results (Sequence no. 4000-4999):''
''Sequence names, process parameters, and test results (Sequence no. 4000-4999):''
*'''(4405) 100mm 5206E 0,5um HMDS'''
*'''(4405) 100mm 5206E 0,5um HMDS'''
Spin-off: ???? rpm. Soft bake: 60s?
Spin-off: 2200? rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|
|0.54
|
|0.4%
|
|30/1 2019
|
|taran
|
|4" wafer, with HMDS. 9 points measured, exclusion zone 5mm.
|}
|}
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