Specific Process Knowledge/Etch/III-V ICP/GaAs-AlGaAs: Difference between revisions
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===GaAs/AlGaAs etching=== | ===GaAs/AlGaAs etching using III-V ICP=== | ||
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Revision as of 10:12, 28 January 2019
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GaAs/AlGaAs etching using III-V ICP
| Recipe | GaAs Etch |
| Cl2 flow | 4 sccm |
| Ar flow | 12 sccm |
| Platen power | 80 W |
| Coil power | 700 W |
| Pressure | 6 mTorr |
| Platen chiller temperature | 20 oC |
| Results (GaAs Etch) | |
| GaAs etch rate | >500 nm/min |
| Sidewall angle | ~ 85-90 o |
| Selectivity (GaAs:Si3N4, GaAs:AlInP) | 10:1, 5:1 |
| Recipe | GaAs_AlGaAs Etch |
| Cl2 flow | 20 sccm |
| N2 flow | 50 sccm |
| Platen power | 100 W |
| Coil power | 600 W |
| Pressure | 2 mTorr |
| Platen chiller temperature | 20 oC |
| Results (GaAs_AlGaAs Etch) | |
| AlGaAs etch rate | >1000 nm/min |
| Sidewall angle | ~ 90 o |
| Selectivity (GaAs:SiO2) | 30:1 |
| Recipe | GaAs_AlGaAs Etch_BCl3 |
| Cl2 flow | 10 sccm |
| BCl3 flow | 10 sccm |
| Ar flow | 10 sccm |
| N2 flow | 4 sccm |
| Platen power | 50 W |
| Coil power | 500 W |
| Pressure | 1 mTorr |
| Platen chiller temperature | 20 oC |
| Results (GaAs_AlGaAs Etch_BCl3) | |
| GaAs etch rate | >750 nm/min |
| Sidewall angle | 85-90 o |
| Selectivity (GaAs:Si3N4, GaAs:AlInP) | 10:1 |
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