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Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,301 edits
No edit summary
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|-style="background:Black; color:White"
|-style="background:Black; color:White"
! Parameter
! Parameter
|Recipe name: '''no name yet''' (testing recipe)   
|Recipe name: '''no name''' (testing recipe)   
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|-
|Coil Power [W]
|Coil Power [W]
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|Al2O3
|Al2O3
|
|
*'''~93nm/min (30s, 1/4 wafer on 6" carrier)'''<br> ''2017-01-20 bghe@danchip''
*'''~93nm/min (30s, 1/4 wafer on 6" carrier)'''<br> ''2017-01-20 bghe@nanolab''
|-
|-


Revision as of 10:08, 28 January 2019

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Parameter Recipe name: no name (testing recipe)
Coil Power [W] 1200
Platen Power [W] 200
Platen temperature [oC] 0
BCl3 flow [sccm] 60
Cl2 flow [sccm] 30
Pressure [mTorr] 4


Material to be etched Etch rate using the above parameters
Al2O3
  • ~93nm/min (30s, 1/4 wafer on 6" carrier)
    2017-01-20 bghe@nanolab


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