Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Crystal Settings: Difference between revisions

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|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for Crystal thickness monitor 2'''
|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Settings for crystal thickness monitor 2'''


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Revision as of 15:47, 25 January 2019

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How to calculate the tooling factor. Taken from the manufacture manual
Material parameters for using the crystal monitors
Material Density Z ratio
TiO2 4.260 0.400
SiO2 2.648 1.000
Si 2.320 0.712


Settings for Crystal thickness monitor 1
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
2014-07-22 157.3% (wafer center)
2015-09-08 132 % B2 B3
C C1 C2 C3
D D1 D2 D3


Settings for crystal thickness monitor 2
Date Tooling factor: TiO2 Tooling factor: SiO2 Tooling factor: Si
A A1 A2 A3
B B1 B2 B3
C C1 C2 C3
D D1 D2 D3
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