Jump to content

Specific Process Knowledge/Lithography/Aligners/Aligner: Maskless 01 processing: Difference between revisions

Taran (talk | contribs)
Taran (talk | contribs)
Line 29: Line 29:


The exposure time increases linearly with exposure dose and writing area. However, due to the stepped nature of the exposure, the exposure time as a function of fill factor is highly nonlinear. It takes the same time to expose a single pixel as an entire 300µm X 400µm writing field, so the exposure time depends on the number of addressed writing fields, rather than on the fill factor of the design. In practice, there will probably not be much variation in exposure time with fill factor. Exposure tests using a 50mm<sup>2</sup> design have shown that the exposure time increases linearly from 40s at 10mJ/cm<sup>2</sup>, to 257s at 1000mJ/cm<sup>2</sup>. The fill factor of the design is 39%, but ~80% of the area is addressed by the writing fields. Scaled to a full 4" wafer, the exposure time is estimated to 2:37 hours at a dose of 100mJ/cm<sup>2</sup>.
The exposure time increases linearly with exposure dose and writing area. However, due to the stepped nature of the exposure, the exposure time as a function of fill factor is highly nonlinear. It takes the same time to expose a single pixel as an entire 300µm X 400µm writing field, so the exposure time depends on the number of addressed writing fields, rather than on the fill factor of the design. In practice, there will probably not be much variation in exposure time with fill factor. Exposure tests using a 50mm<sup>2</sup> design have shown that the exposure time increases linearly from 40s at 10mJ/cm<sup>2</sup>, to 257s at 1000mJ/cm<sup>2</sup>. The fill factor of the design is 39%, but ~80% of the area is addressed by the writing fields. Scaled to a full 4" wafer, the exposure time is estimated to 2:37 hours at a dose of 100mJ/cm<sup>2</sup>.
<br clear="all" />


==Resolution==
==Resolution==