Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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|'''~0.9''' (SiO2:resist) | |'''~0.9''' (SiO2:resist) | ||
|'''~1.25:1 (Barc:KRF) | |'''~1.25:1 (Barc:KRF) | ||
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|Etch rate in silicon | |||
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bghe@Nanolab 20190117 | |||
*33.8 nm/min (middle of wafer with 80% load) bghe@Nanolab 20190117 | |||
*34.3 nm/min (edge of wafer with 80% load) | |||
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|Wafer uniformity (100mm) | |Wafer uniformity (100mm) |
Revision as of 17:04, 18 January 2019
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It is possible to etch SiO2 in the ICP metal etcher but it is not designed for it and the results are not fantastic. It is a challenge to get a good selectivity to resist (typically in the range of 1:1 or worse) and it is probably not possible to get a profile angle of 90 degrees. More likely about 75-85 degrees. Different chemistries can be applied either based on CF4 or C4F8. If seems that C4F8 can give the best selectivity to resist (best case I have seem was 1:11 but it depends a lot on the process parameters)). If low coil power is needed CF4 chemistry is used because C4F8 needs a higher power to generate a plasma. /bghe 2016-04-25
Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess
This recipe can be used for slow etching of SiO2 with resist as masking material. Here are some test results presented.
Parameter | Resist mask |
---|---|
Coil Power [W] | 200 |
Platen Power [W] | 25 |
Platen temperature [oC] | 0 |
CF4 flow [sccm] | 20 |
H2 flow [sccm] | 10 |
Pressure [mTorr] | 3 |
Results | Test on wafer with 50% load (Travka 50), by BGHE @danchip | 100% load on 100mm wafers with Barc and KRF (no mask) |
---|---|---|
Etch rate of thermal oxide | 44.1 nm/min (50% etch load) (01-02-2014) | |
Selectivity to resist [:1] | ~0.9 (SiO2:resist) | ~1.25:1 (Barc:KRF) |
Etch rate in silicon |
bghe@Nanolab 20190117
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|
Wafer uniformity (100mm) | ±1.6% (01-02-2014) | |
Profile [o] | Take a look at the images but be aware that the resist profile was not good to begin with. | |
Wafer uniformity map (click on the image to view a larger image) | ||
SEM profile images |
|
|
Etch rate in barc | 50 nm/min (2014-09-09) | |
Etch rate in KRF resist | 40 nm/min (2014-09-09) |
SiO2 etch using DUV mask
Two chemistry regimes has been explored: One using CF4 and one using C4F8
- CF4: bad selectivity to the resist mask.
- C4F8: Better selectivity to the resist mask can be achieved
- Tests done by Peixiong
- Tests done by Berit
- Test by Zhibo Li @Danchip dec. 2016 - based on the work of Peixiong and Berit: File:Zhibo Li SiO2 ICP etch (dose205).docx
Parameter | Recipe on ICP metal: A SiO2 etch with C4F8 with resist mask |
---|---|
Coil Power [W] | 1000 |
Platen Power [W] | 200 |
Platen temperature [oC] | 0 |
C4F8 flow [sccm] | 10 |
H2 flow [sccm] | 28 |
Pressure [mTorr] | 2.5 |
Results | Test |
---|---|
Etch rate of thermal oxide |
|
Selectivity to resist [:1] | 4-5:1 (SiO2:resist) by bghe@danchip (2015-06-02) |
Cr etch rate | 1.6 nm/min (1:90 to SiO2) by Martin Lind Ommen (fall 2016) |
Profile [o] | 86-87 dg by bghe@danchip (2015-06-02) |
Wafer uniformity map (click on the image to view a larger image) | |
SEM profile images | ![]() ![]() by bghe@danchip (2015-06-02) |
Etch rate in barc | |
Etch rate in KRF resist | 34 nm/min by bghe@danchip (2015-06-02) |
Comments |
|
SiO2 etch nLOF
Parameter | Resist mask |
---|---|
Coil Power [W] | 800 |
Platen Power [W] | 100 |
Platen temperature [oC] | 0 |
CF4 flow [sccm] | 30 |
H2 flow [sccm] | 10 |
Pressure [mTorr] | 4 |
Results | Test on wafer with 50% load (Travka 50), by BGHE @danchip |
---|---|
Etch rate of thermal oxide | >110 nm/min (50% etch load) (09-03-2015) |
Selectivity to resist [:1] | <0.7:1 (SiO2:resist) |
Wafer uniformity (100mm) | Not known |
Profile [o] | Not known |
Wafer uniformity map (click on the image to view a larger image) | Not known |
SEM profile images | NONE |
Etch rate in nLOF resist | 1.6µm was removed after 10min |
Comment | After 10min etch the resist was gone and the etch depth as 1.145µm in the oxide |
SiO2 etch with e-beam resist
Process flow |
---|
px1283lablejan1542014t1 250uc at 40mm x y pxline400p1000jan142014dt2 y= -40 -45 -50 -55mm dose 200 240 280 320uc
|
Parameter | Resist mask |
---|---|
Coil Power [W] | 800 |
Platen Power [W] | 150 |
Platen temperature [oC] | -10 |
C4F8 flow [sccm] | 8 |
H2 flow [sccm] | 30 |
Pressure [mTorr] | 2.5 |
Results | Test on 6" wafer, by Peixiong Shi@danchip |
---|---|
Etch rate of thermal oxide | 131 nm/min (15-01-2014) |
Selectivity to resist [:1] | ~1.8:1 (SiO2:resist) |
Profile [o] | Not measured |
Wafer uniformity map (click on the image to view a larger image) | Not known |
SEM images |
|