Specific Process Knowledge/Back-end processing/Polisher CMP: Difference between revisions

Revision as of 10:35, 29 November 2018

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The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates.

The user manual, user APV, technical information and contact information can be found in LabManager:

Equipment		Polisher/Lapper
Purpose	Polishing of	Silicon SiO2
Performance	20x20mm substrate	Removal rate: 400nm/min Thickness accuracy: +/- ? µm Thickness homogeneity: +/- ? µm Roughness: +/- ? µm
Performance	100mm substrate	Removal rate: ~ 60 nm/min Thickness accuracy: ? µm Thickness homogeneity: ? µm Roughness: +/- ? µm
Process parameter range	Polishing liquid	SF1 Polishing Fluid
	Polishing cloths	Chemcloth Polishing Cloths
	Rotation	Plate Head/Puck
	Arm sweep	Polishing: 20% (inner) - 100% (outer)
Substrates	Sample size	one 20x20mm piece one 50 mm wafer one 2" wafer one 100 mm wafer one 150 mm wafer
	Allowed materials	Silicon Glass/Quartz

@@ Line 38: / Line 38: @@
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
-|style="background:LightGrey; color:black"| Thinning
+|style="background:LightGrey; color:black"| 20x20mm substrate
 |style="background:WhiteSmoke; color:black"|
-*Removal rate: 1-10µm/min
+*Removal rate: 400nm/min
-*Thickness accuracy: +/- 10 µm
+*Thickness accuracy: +/- ? µm
-*Thickness homogeneity: +/- 10 µm
+*Thickness homogeneity: +/- ? µm
 *Roughness: +/- ? µm
 <!-- |style="background:WhiteSmoke; color:black"|
@@ Line 49: / Line 49: @@
 *Performance range 3 -->
 |-
-|style="background:LightGrey; color:black"|Polishing
+|style="background:LightGrey; color:black"|100mm substrate
 |style="background:WhiteSmoke; color:black"|
-*Removal rate: ~1 µm/min
+*Removal rate: ~ 60 nm/min
 *Thickness accuracy: ? µm
 *Thickness homogeneity: ? µm