Specific Process Knowledge/Back-end processing/Polisher CMP: Difference between revisions

Revision as of 10:27, 29 November 2018

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The Logitech Orbis Polisher (CMP) is for polishing wafers (removing material in the nm range) it is not for thinning down wafers or other substrates.

The user manual, user APV, technical information and contact information can be found in LabManager:

Equipment		Polisher/Lapper
Purpose	Thinning of substrates of	InP GaAs Silicon Metals Glass/Quartz
Performance	Thinning	Removal rate: 1-10µm/min Thickness accuracy: +/- 10 µm Thickness homogeneity: +/- 10 µm Roughness: +/- ? µm
Performance	Polishing	Removal rate: ~1 µm/min Thickness accuracy: ? µm Thickness homogeneity: ? µm Roughness: +/- ? µm
Process parameter range	Polishing liquid	SF1 Polishing Fluid
	Polishing cloths	Chemcloth Polishing Cloths
	Rotation speed	Thinning: 5-20 rpm Polishing: 5-80 rpm
	Arm sweep	Thinning: stationary Polishing: 12% (inner) - 80% (outer)
Substrates	Sample size	one 20x20mm piece one 50 mm wafer one 2" wafer one 100 mm wafer one 150 mm wafer
	Allowed materials	Silicon Glass/Quartz

@@ Line 64: / Line 64: @@
 |style="background:LightGrey; color:black"|Polishing liquid
 |style="background:WhiteSmoke; color:black"|
-*Al2O3 (alumina) powder: 3, 9 or 20 µm
+*SF1 Polishing Fluid
-*Chemlox (for polishing)
-*SF1 Polishing Fluid (for polishing e.g. SiO2)
 |-
 |style="background:LightGrey; color:black"|Polishing cloths
 |style="background:WhiteSmoke; color:black"|
-*Chemcloth Polishing Cloths (for use with SF1 liquid)
+*Chemcloth Polishing Cloths
 |-
 |style="background:LightGrey; color:black"|Rotation speed