Specific Process Knowledge/Back-end processing/Polisher CMP: Difference between revisions
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<!-- give the link to the equipment info page in LabManager: --> | <!-- give the link to the equipment info page in LabManager: --> | ||
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=430 The Logitech Orbis (CMP) in LabManager] | [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=430 The Logitech Orbis (CMP) in LabManager] | ||
==Equipment performance and process related parameters== | |||
{| border="2" cellspacing="0" cellpadding="2" | |||
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | |||
|style="background:WhiteSmoke; color:black"|<b>Polisher/Lapper</b> | |||
<!-- |style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> --> | |||
|- | |||
!style="background:silver; color:black;" align="center" width="60"|Purpose | |||
|style="background:LightGrey; color:black"| | |||
Thinning of substrates of | |||
|style="background:WhiteSmoke; color:black"| | |||
*InP | |||
*GaAs | |||
*Silicon | |||
*Metals | |||
*Glass/Quartz | |||
<!-- |style="background:WhiteSmoke; color:black"| | |||
*Purpose 1 | |||
*Purpose 2 | |||
*Purpose 3 --> | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | |||
|style="background:LightGrey; color:black"| Thinning | |||
|style="background:WhiteSmoke; color:black"| | |||
*Removal rate: 1-10µm/min | |||
*Thickness accuracy: +/- 10 µm | |||
*Thickness homogeneity: +/- 10 µm | |||
*Roughness: +/- ? µm | |||
<!-- |style="background:WhiteSmoke; color:black"| | |||
*Performance range 1 | |||
*Performance range 2 | |||
*Performance range 3 --> | |||
|- | |||
|style="background:LightGrey; color:black"|Polishing | |||
|style="background:WhiteSmoke; color:black"| | |||
*Removal rate: ~1 µm/min | |||
*Thickness accuracy: ? µm | |||
*Thickness homogeneity: ? µm | |||
*Roughness: +/- ? µm | |||
<!-- |style="background:WhiteSmoke; color:black"| | |||
*Performance range --> | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range | |||
|style="background:LightGrey; color:black"|Polishing liquid | |||
|style="background:WhiteSmoke; color:black"| | |||
*Al2O3 (alumina) powder: 3, 9 or 20 µm | |||
*Chemlox (for polishing) | |||
*SF1 Polishing Fluid (for polishing e.g. SiO2) | |||
|- | |||
|style="background:LightGrey; color:black"|Polishing cloths | |||
|style="background:WhiteSmoke; color:black"| | |||
*Chemcloth Polishing Cloths (for use with SF1 liquid) | |||
|- | |||
|style="background:LightGrey; color:black"|Rotation speed | |||
|style="background:WhiteSmoke; color:black"| | |||
*Thinning: 5-20 rpm | |||
*Polishing: 5-80 rpm | |||
|- | |||
|style="background:LightGrey; color:black"|Arm sweep | |||
|style="background:WhiteSmoke; color:black"| | |||
*Thinning: stationary | |||
*Polishing: 12% (inner) - 80% (outer) | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
|style="background:WhiteSmoke; color:black"| | |||
*<nowiki>#</nowiki> small samples | |||
*one 50 mm wafer | |||
*one 100 mm wafer | |||
<!-- |style="background:WhiteSmoke; color:black"| | |||
*<nowiki>#</nowiki> small samples | |||
*<nowiki>#</nowiki> 50 mm wafers | |||
*<nowiki>#</nowiki> 100 mm wafers | |||
*<nowiki>#</nowiki> 150 mm wafers --> | |||
|- | |||
| style="background:LightGrey; color:black"|Allowed materials | |||
|style="background:WhiteSmoke; color:black"| | |||
*InP | |||
*GaAs | |||
*Silicon | |||
*Metals | |||
*Glass/Quartz | |||
<!-- |style="background:WhiteSmoke; color:black"| | |||
*Allowed material 1 | |||
*Allowed material 2 | |||
*Allowed material 3 --> | |||
|- | |||
|} | |||
<br clear="all" /> | |||