Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions
| Line 200: | Line 200: | ||
* Sapphire | * Sapphire | ||
* SiC | * SiC | ||
* Resists | |||
* Some polymers | * Some polymers | ||
*<5% metal on the suface (for 4") | *<5% metal on the suface (for 4") | ||
| Line 207: | Line 208: | ||
* Sapphire | * Sapphire | ||
* SiC | * SiC | ||
* Resists | |||
* Al,(Cr) as masking materials | * Al,(Cr) as masking materials | ||
| style="background:lightgrey; color:black" colspan="2"| | | style="background:lightgrey; color:black" colspan="2"| | ||
| Line 213: | Line 215: | ||
* Sapphire | * Sapphire | ||
* SiC | * SiC | ||
* Resists | |||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon | * Silicon | ||
| Line 219: | Line 222: | ||
* SiC | * SiC | ||
* Al, Cr, Ti, W, Mo, Nb | * Al, Cr, Ti, W, Mo, Nb | ||
* Resists | |||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon | * Silicon | ||
| Line 225: | Line 229: | ||
* SiC | * SiC | ||
* GaAs, GaN, InP, with epitaxial layers | * GaAs, GaN, InP, with epitaxial layers | ||
* Resists (at low temperature processing) | |||
| style="background:lightgrey; color:black" | | | style="background:lightgrey; color:black" | | ||
* Silicon | * Silicon | ||
| Line 231: | Line 236: | ||
* SiC | * SiC | ||
* GaAs, GaN, InP, with epitaxial layers | * GaAs, GaN, InP, with epitaxial layers | ||
* Resists (at low temperature processing) | |||
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