Specific Process Knowledge/Thin film deposition/Wordentec: Difference between revisions
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*Thermal evaporation | *Thermal evaporation | ||
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!style="background:silver; color:black" align="left" rowspan=" | !style="background:silver; color:black" align="left" rowspan="3" valign="top" |Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*~2.5Å/s - 15Å/s | *~2.5Å/s - 15Å/s | ||
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|style="background:LightGrey; color:black"|Thickness uniformity | |||
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*~6 % variation across a 4" wafer for thermal evaporation of 100 nm Al ** | |||
*~9 % variation across a 4" wafer for e-beam evaporation of 100 nm Ni ** | |||
*~6 % variation across a 4" wafer for e-beam evaporation of 10 nm Ti + 90 nm Au ** | |||
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!style="background:silver; color:black" align="left" rowspan= "2" valign="top" |Process parameter range | !style="background:silver; color:black" align="left" rowspan= "2" valign="top" |Process parameter range | ||
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'''*''' ''For thicknesses above | '''*''' ''For e-beam evaporation and sputtering, permission is required for thicknesses above 600 nm. For thermal evaporation, permission is required for thicknesses above 120 nm. This is to ensure that there will be enough material present. Contact metal@danchip.dtu.dk or thinfilm@danchip.dtu.dk'' | ||
'''**''' ''% variation calculated as (Max-Min)/Average. Note that for thermally evaporated Al, the max was on one side of the wafer and the minimum directly opposite.'' | |||
== Quality control (QC) for Wordentec== | == Quality control (QC) for Wordentec== | ||