Specific Process Knowledge/Thin film deposition/thermalevaporator: Difference between revisions

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 |style="background:LightGrey; color:black"|Thickness uniformity
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-*approx. 12 % change from center to edge on a 4" wafer with 100 nm Al
+*approx. 13 % variation on a 4" wafer with 100 nm Al *
-*approx. 20 % change from center to edge on a 4" wafer with 100 nm Ag
+*approx. 23 % variation on a 4" wafer with 100 nm Ag *
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 |style="background:LightGrey; color:black"|Pumpdown time
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+''*'' ''The variation is defined as (max-min)/average for the various points measured on the wafer. The max was around the center and the min somewhere along the edge in all cases. The exact location of the max thickness depends on placing the sample above the point of max material flux.''