Specific Process Knowledge/Characterization: Difference between revisions
| Line 49: | Line 49: | ||
|-style="background:#C0C0C0;" | |-style="background:#C0C0C0;" | ||
| Film stress||||||||x||||||||||||||||||x|||||||||| | | Film stress||||||||x||||||||||||||||||x|||||||||| | ||
|- | |||
|-style="background:#DCDCDC;" | |||
|Imaging||x||x||x||||x|||||||||||||||||||||||||| | |||
|- | |- | ||
|-style="background:#DCDCDC;" | |-style="background:#DCDCDC;" | ||
| Line 69: | Line 71: | ||
|-style="background:#DCDCDC;" | |-style="background:#DCDCDC;" | ||
| Refractive index||||||||||||x||x|||||||||||||||||||||| | | Refractive index||||||||||||x||x|||||||||||||||||||||| | ||
|- | |- | ||
Revision as of 11:01, 26 October 2018
Feedback to this page: click here
Overview of characteristics and where to measure it
| Optical Micro- scopes | SEM (incl. EDX) | AFM | Stylus profiler | Optical profiler | Filmtek (reflec- tometer) | Ellip- someter | Thickness stylus | XPS | PL mapper | 4-point probe | Probe station | XRD | Life time scanner | Drop shape analyser | Hardness tester | Differential Scanning Calorimeter DSC | Surfscan | |
| Breakdown voltage | ||||||||||||||||||
| Charge carrier life time | x | |||||||||||||||||
| Contact angle hydrophobic/hydrophillic | x | |||||||||||||||||
| Crystallinity | x | x | ||||||||||||||||
| Deposition uniformity | x | x | x | |||||||||||||||
| Electrical conductivity | x | |||||||||||||||||
| Element analysis | x | x | x 4) | x 4) | ||||||||||||||
| Film stress | x | x | ||||||||||||||||
| Imaging | x | x | x | x | ||||||||||||||
| Material Hardness | x | |||||||||||||||||
| Optical gap | x | x | ||||||||||||||||
| Particles | x | x | x | x | ||||||||||||||
| Phase changes | x | |||||||||||||||||
| Reflectivity | x | x | x 6) | |||||||||||||||
| Refractive index | x | x |
| |||||||||||||||
| Resistivity | x | |||||||||||||||||
| Step coverage | x 1) | x 1) | ||||||||||||||||
| Surface roughness | x | x | x | |||||||||||||||
| Thermal conductivity | ||||||||||||||||||
| Thin film thickness | x 1) | x 1) | x 2) | x 2) | x | x | x | x 5) | x 3) | x | ||||||||
| Voids in wafer bonding | x | |||||||||||||||||
| Wafer thickness | x 1) | x 1) | x | |||||||||||||||
- Using the cross section method
- Using the create step method
- With known resistivity
- Composition information for crystalline materials
- Only single layer
- Good for characterization of VCSEL structures and DBR mirrors
Choose characterization topic
- Element analysis
- Measurement of film thickness and optical constants
- Photoluminescence mapping
- Sample imaging
- Sample preparation for inspection
- Stress measurement
- Hardness measurement
- Wafer thickness measurement
- Topographic measurement
- Contact angle measurement
- Four-Point Probe (Resistivity measurement)
- Carrier density (doping) profiler
- Scanning Electron Microscopy
Choose equipment
AFM
Element analysis
Optical and stylus profilers
Optical microscopes
Optical characterization
- Ellipsometer
- Filmtek 4000
- Prism Coupler
- PL mapper - Photoluminescence mapper
- Lifetime scanner MDPmap
SEMs at CEN
- FIB-SEM FEI QUANTA 200 3D
- Dual Beam FEI Helios Nanolab 600
- SEM FEI Nova 600 NanoSEM
- SEM FEI Quanta 200 ESEM FEG
- SEM Inspect S