Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1/3scanned: Difference between revisions
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We note the following: | We note the following: | ||
# The Hf4f peak is at very low binding energy, very near or even in the valence band. We can therefore expect to see contributions from other elements as well. This begins at etch level 10 or 11 where the intensity from Hf4f is low. Most notably, a peak at binding energy 23-24 eV becomes dominant beyond etch level 13. It would probably make most sense to add a peak constrained in this binding energy range and then exclude that peak from the subsequent quantifications. | # The Hf4f peak is at very low binding energy, very near or even in the valence band. We can therefore expect to see contributions from other elements as well. This begins at etch level 10 or 11 where the intensity from Hf4f is low. Most notably, a peak at binding energy 23-24 eV becomes dominant beyond etch level 13. It would probably make most sense to add a peak constrained in this binding energy range and then exclude that peak from the subsequent quantifications. | ||
# | # At etch levels 1 to 9 the fitting routine is struggling to fit the intensity at binding energies around 16 and 18 eV. This points strongly towards the presence of intermediate oxidation steps. | ||