Specific Process Knowledge/Characterization/XPS/Processing/ALDSandwich1: Difference between revisions
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This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics|'''HERE''']] and go through this part first. | This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press [[Specific Process Knowledge/Characterization/XPS/Processing/Basics|'''HERE''']] and go through this part first. | ||
This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>. | This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al<sub>2</sub>O<sub>3</sub>, 15 nm of TiO<sub>2</sub> and 16 nm of HfO<sub>2</sub>. In the XPS an experiment with three points of analysis has been set up to analyse this sandwiched structure: | ||
# Point: snapshot | |||
## Depth profile: 2keVHigh20secs | |||
### Hf4f Snap | |||
### Al2p Snap | |||
### Si2p Snap | |||
### C1s Snap | |||
### Ti2p Snap | |||
### O1s Snap | |||
# Point: Scanned | |||
## Depth profile: 2keVHigh20secs | |||
### XPS survey | |||
### Hf4f Scan | |||
### Al2p Scan | |||
### Si2p Scan | |||
### C1s Scan | |||
### Ti2p Scan | |||
### O1s Scan | |||
# Point: Extended +20eV end, 0.2 eV step | |||
## Depth profile: 2keVHigh20secs | |||
### XPS survey | |||
### Hf4f Scan | |||
### Al2p Scan | |||
### Si2p Scan | |||
### C1s Scan | |||
### Ti2p Scan | |||
### O1s Scan | |||
== Guidelines on data processing == | == Guidelines on data processing == |
Revision as of 11:02, 16 October 2018
XPS analysis of ALD deposited layers
This section assumes that you are familiar with the basic operations of data processing in Avantage. If not, then press HERE and go through this part first.
This is an analysis of ALD deposited layers: A silicon wafer has been coated with with 15 nm Al2O3, 15 nm of TiO2 and 16 nm of HfO2. In the XPS an experiment with three points of analysis has been set up to analyse this sandwiched structure:
- Point: snapshot
- Depth profile: 2keVHigh20secs
- Hf4f Snap
- Al2p Snap
- Si2p Snap
- C1s Snap
- Ti2p Snap
- O1s Snap
- Depth profile: 2keVHigh20secs
- Point: Scanned
- Depth profile: 2keVHigh20secs
- XPS survey
- Hf4f Scan
- Al2p Scan
- Si2p Scan
- C1s Scan
- Ti2p Scan
- O1s Scan
- Depth profile: 2keVHigh20secs
- Point: Extended +20eV end, 0.2 eV step
- Depth profile: 2keVHigh20secs
- XPS survey
- Hf4f Scan
- Al2p Scan
- Si2p Scan
- C1s Scan
- Ti2p Scan
- O1s Scan
- Depth profile: 2keVHigh20secs
Guidelines on data processing
Click HERE to see some general guidelines on data processing in Avantage.
How to get the data used in the example below
The wiki does not allow uploading of *.zip data files so the zipped data file has been renamed to a *.xls file. Therefore, do the following:
- Download this File:Experiment 2.xls.
- Rename the downloaded file Experiment_2.xls to Experiment_2.zip
- Extract to a folder on a local drive (right click and select 'Extract all'). Avantage will not work on network drives.