Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma UV processing: Difference between revisions
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==AZ "5206E" coating (syringe)== | |||
!SECTION UNDER CONSTRUCTION! | |||
AZ 5214E 1:1 by volume in PGMEA. | |||
Spin coating of standard thicknesses (5 - 10 µm) of AZ 4562 dispensed from syringe on Spin Coater: Gamma UV is divided into two steps: Spin coating, and soft baking. The spin coating uses dynamic dispense of resist at 300 rpm, using a volume of 3 ml for 100 mm substrates, and 6 ml for 150 mm substrates, respectively. The dispense is followed by spin-off at a thickness dependent spin speed for 30 seconds with backside rinse. The wafer dried at 800 rpm for 15s before stopping. Soft baking is done at 100°C in 1 mm proximity for a thickness dependent time. The coating may be affected by the backside rinse at the very edge of the wafer, something which should be considered if the resist is used as an etch mask. | |||
''Sequence names, process parameters, and test results (Sequence no. 4000-4999):'' | |||
*'''(4462) DCH 100mm 4562 6.2um''' | |||
Spin-off: 2200 rpm. Soft bake: 60s? | |||
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!Substrate | |||
!Thickness | |||
!Uniformity (+/-) | |||
!Test date | |||
!Tester initials | |||
!Comments | |||
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|Silicon with native oxide | |||
|0.49 µm | |||
|0.4% | |||
|19/3 2018? | |||
|taran | |||
|4" wafer, no HMDS. 9 points measured, exclusion zone 5mm. | |||
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|Silicon with native oxide | |||
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