Specific Process Knowledge/Thin film deposition/Temescal/Acceptance Test: Difference between revisions
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The uniformity of the ion beam etch was tested on Si wafers with SiO2 coating of a known thickness. | The uniformity of the ion beam etch was tested on Si wafers with SiO2 coating of a known thickness. | ||
For metal films, the thickness and for Ti/Ni the sheet resistance uniformity were measured. | For metal films, the thickness and for Ti/Ni the sheet resistance uniformity were measured. | ||
Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt. | |||
Full acceptance test report here: | Full acceptance test report here: | ||
[[:File:Temescal Acceptance Test Results Mar-April-May 2018.pdf]] | [[:File:Temescal Acceptance Test Results Mar-April-May 2018.pdf]] | ||
Revision as of 13:55, 12 September 2018
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Acceptance test and test results
Topics:
- Vacuum performance
- Ion beam etching of SiO2
- E-beam testing: Ti/Au and Ti/Ni deposition
The uniformity of the ion beam etch was tested on Si wafers with SiO2 coating of a known thickness.
For metal films, the thickness and for Ti/Ni the sheet resistance uniformity were measured.
Side wall coverage was evaluated in SEM for Ti/Au films deposited at normal incidence (what most users require, which gives no side-wall deposition) and with various degrees of tilt.
Full acceptance test report here:
File:Temescal Acceptance Test Results Mar-April-May 2018.pdf