Specific Process Knowledge/Thin film deposition/Deposition of Gold/Adhesion layers: Difference between revisions

To avoid oxidation of Ti or Cr that is in physical contact with the nano-electronic materials, one solution is to avoid these materials completely. Indeed, some of the best performing CNT devices are made without the use of adhesion layers, as e.g. Pd which is directly used. '''If an adhesion layer is required for mechanical stability, a less than 2nm thin Cr layer is recommended and Ti must be avoided'''. This is because the partially oxidized Ti might form a barrier between the nano-electronic material and the Au over-layer, with a consequent deterioration of the electron transport performances. Because of the single-layer morphology due to the Cr-Au alloy formation, the alloy will make electrical and physical contact to the nano-electronic material, despite the chrome oxide content. Furthermore, a low temperature annealing will enhance inter-diffusion of Au and Cr and improve electrical contact between the nano-electronic material and the Au over-layer.

== Effect on Au film morphology, grain size and texture ==