Specific Process Knowledge/Thin film deposition: Difference between revisions

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[[/Lesker|Ruthenium]]<br/>
[[/Deposition of Ruthenium|Ruthenium]]<br/>
[[/Deposition of Silver|Silver]]<br/>
[[/Deposition of Silver|Silver]]<br/>
[[/Deposition of Tantalum|Tantalum]]<br/>
[[/Deposition of Tantalum|Tantalum]]<br/>

Revision as of 12:42, 29 August 2018

3rd Level - Material/Method

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Choose material to deposit

Dielectrica Semicondutors Metals Alloys Transparent conductive oxides Polymers

Silicon Nitride - and oxynitride
Silicon Oxide
Titania (TiO2, Titanium Oxide)
Alumina (Al2O3, Aluminium Oxide)
Aluminum Nitride (AlxNy)
Tantalum (Ta2O5, Tantalum pentoxide)
Cromia (Cr2O3, Chromium Oxide)
Hafnium Oxide
Titanium Nitride - cheramic

Silicon
Germanium
Zinc Oxide (ZnO)

Aluminium
Chromium
Cobalt
Copper
Gold
Iron
Magnesium
Molybdenum
Nickel
Niobium
Palladium
Platinum
Ruthenium
Silver
Tantalum
Tin
Titanium
Tungsten

TiW alloy (10%/90% by weight)
NiV alloy
AlCu
CoFe
CuTi
FeMn
MnIr
NiCo
NiFe
YSZ (Yttrium stabilized Zirconium)

ITO (Tin doped Indium Oxide)
AZO (Aluminum doped Zinc Oxide)

SU-8
Antistiction coating
Topas
PMMA

Choose deposition equipment

PVD LPCVD PECVD ALD Coaters Others


  • ALD1 - Atomic Layer Deposition (thermal)
  • ALD2 (PEALD) - Atomic Layer Deposition (thermal and plasma enhanced)

See the Lithography/Coaters page for coating polymers