Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

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Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment:




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!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Physimeca|Physimeca]])
|-  
|-  
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|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
! Pre-clean
! Pre-clean
|
|Ar ion source
|RF Ar clean
|RF Ar clean
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Layer thickness
! Layer thickness
|10Å to 3000Å*
|10 Å - 1 µm*
|10Å to 2000Å
|10 Å to 200 nm
|-
|-
|-style="background:Lightgrey; color:black"
|-style="background:Lightgrey; color:black"
! Deposition rate
! Deposition rate
|2Å/s to 10Å/s
|0.5 Å/s to 10Å/s
|2Å/s to 10Å/s
|2 Å/s to 10Å/s
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers
*smaller pieces
*Up to 3x8" wafers (ask for holder)
*smaller wafers and pieces
|
|
*1x 2" wafer or
*1x 2" wafer or
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!Allowed materials
!Allowed materials
|
|
* Silicon oxide  
*Silicon oxide
* Silicon (oxy)nitride  
*Silicon (oxy)nitride
* Photoresist  
*Photoresist
* PMMA  
*PMMA
* Mylar  
*Mylar
* SU-8
*Metals
* Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
|
* Silicon oxide
* Silicon oxide
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|}
|}


'''*''' ''For thicknesses above 200 nm permission is requested.''
'''*''' ''If depositing more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.''

Revision as of 12:30, 29 August 2018

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Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment:


E-beam evaporation (Temescal) E-beam evaporation (Physimeca)
General description E-beam deposition of Pd E-beam deposition of Pd
Pre-clean Ar ion source RF Ar clean
Layer thickness 10 Å - 1 µm* 10 Å to 200 nm
Deposition rate 0.5 Å/s to 10Å/s 2 Å/s to 10Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller wafers and pieces
  • 1x 2" wafer or
  • 1x 4" wafers or
  • Several smaller pieces
Allowed materials
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
Comment

* If depositing more than 600 nm, please write to metal@danchip.dtu.dk well in advance to ensure that enough material is present.

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