Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions

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! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]])
|-  
|-  
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
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|E-beam deposition of Cu
|E-beam deposition of Cu
|Sputter deposition of Cu
|Sputter deposition of Cu
|Electroplating of Cu


|-
|-
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|Ar ion bombardment
|Ar ion bombardment
|RF Ar clean
|RF Ar clean
|None


|-
|-
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|10Å to 1µm*
|10Å to 1µm*
|10Å to 1µm**  
|10Å to 1µm**  
| thickness window undefined yet


|-
|-
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|1Å/s to 10Å/s
|1Å/s to 10Å/s
| ~1Å/s
| ~1Å/s
|
|-
|-


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*smaller pieces
*smaller pieces
*Up to 1x6" wafers
*Up to 1x6" wafers
|
*1x4" wafer
|-
|-


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* SU-8  
* SU-8  
* Metals  
* Metals  
| Base Materials:
 
*Silicon
Seed metals:
*Ti(10nm) + Au (80nm) (Recommended)
*Cr(10nm) + Au (80nm) (Recommended)
  |-style="background:WhiteSmoke; color:black"
  |-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|As of August 2018, Cu has not yet been deposited in this machine. Contact the Thin Film group to develop a process.
|As of August 2018, Cu has not yet been deposited in this machine. Contact the Thin Film group to develop a process.
|
|
|Sample must be compatible with plating bath. Seed metal layer required to run electroplating process.
|}
|}


Revision as of 08:20, 22 August 2018

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Deposition of Cu

Copper can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipments.


E-beam evaporation (Temescal) Sputter deposition (Lesker)
General description E-beam deposition of Cu Sputter deposition of Cu
Pre-clean Ar ion bombardment RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm**
Deposition rate 1Å/s to 10Å/s ~1Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comment As of August 2018, Cu has not yet been deposited in this machine. Contact the Thin Film group to develop a process.

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

Studies of Cu deposition processes

Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel

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