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Specific Process Knowledge/Lithography/CSAR: Difference between revisions

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=== Dark Erosion ===
Dark erosion has been measured on a un-exposed 4" wafer spin coated with CSAR 6200.18 to a thickness of approximately 549 nm. The resist thickness has been measured by VASE Ellipsometer before development, and after 3 minutes, 13 minutes, and 30 minutes of development in AR 600 546.
The graphs shows the measured thicknesses; the errorbars represents the standard deviations from the ellipsometric measurements. The average etch rate of CSAR is ~0.1 nm/min.
[[File:dark erosion.png|right|400px]]
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== Development ==
== Development ==
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=== Dark Erosion ===
Dark erosion has been measured on a un-exposed 4" wafer spin coated with CSAR 6200.18 to a thickness of approximately 549 nm. The resist thickness has been measured by VASE Ellipsometer before development, and after 3 minutes, 13 minutes, and 30 minutes of development in AR 600 546.
The graphs shows the measured thicknesses; the errorbars represents the standard deviations from the ellipsometric measurements. The average etch rate of CSAR is ~0.1 nm/min.
[[File:dark erosion.png|right|400px]]
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== Dosetests ==
== Dosetests ==
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/CSAR"