Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions

From LabAdviser
Paphol (talk | contribs)
Reet (talk | contribs)
→‎Deposition of Cu: removed Alcatel, added Temescal
Line 10: Line 10:
!  
!  


! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]])
! Electroplating ([[Specific Process Knowledge/Thin film deposition/Electroplating-Cu|Electroplating-Cu]])
Line 25: Line 25:


!Pre-clean
!Pre-clean
|RF Ar clean
|Ar ion bombardment
|RF Ar clean
|RF Ar clean
|None
|None
Line 33: Line 33:


!Layer thickness
!Layer thickness
|10Å to 0.5µm*
|10Å to 1µm*
|10Å to 1µm*  
|10Å to 1µm**  
| thickness window undefined yet
| thickness window undefined yet


Line 41: Line 41:


! Deposition rate
! Deposition rate
|/s to 15Å/s
|/s to 10Å/s
| ~1Å/s
| ~1Å/s
|
|
Line 49: Line 49:
! Batch size
! Batch size
|
|
*Up to 1x4" wafers
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*smaller pieces
*smaller pieces
|
|
Line 62: Line 63:


|
|
* Silicon
*Silicon
* Silicon oxide  
*Silicon oxide
* Silicon (oxy)nitride  
*Silicon (oxy)nitride
* Photoresist  
*Photoresist
* PMMA  
*PMMA
* Mylar  
*Mylar
* SU-8
*Metals
* Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]


|
|
Line 87: Line 88:
  |-style="background:WhiteSmoke; color:black"
  |-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|
|As of August 2018, Cu has not yet been deposited in this machine. Contact Thin Film group to develop a process.
|
|
|Sample must be compatible with plating bath. Seed metal layer required to run electroplating process.  
|Sample must be compatible with plating bath. Seed metal layer required to run electroplating process.  
|}
|}


'''*''' ''To deposit layers thicker then 200 nm permission is required (contact Thin film group)''
'''**''' ''To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''
'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)''


== Studies of Cu deposition processes ==
== Studies of Cu deposition processes ==


[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with Alcatel''
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with Alcatel''

Revision as of 09:37, 6 August 2018

Feedback to this page: click here

Deposition of Cu

Copper can be deposited by e-beam evaporation, sputtering or electroplating. In the chart below you can compare the different deposition equipments.


E-beam evaporation (Temescal) Sputter deposition (Lesker) Electroplating (Electroplating-Cu)
General description E-beam deposition of Cu Sputter deposition of Cu Electroplating of Cu
Pre-clean Ar ion bombardment RF Ar clean None
Layer thickness 10Å to 1µm* 10Å to 1µm** thickness window undefined yet
Deposition rate 1Å/s to 10Å/s ~1Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
  • 1x4" wafer
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Base Materials:
  • Silicon

Seed metals:

  • Ti(10nm) + Au (80nm) (Recommended)
  • Cr(10nm) + Au (80nm) (Recommended)
Comment As of August 2018, Cu has not yet been deposited in this machine. Contact Thin Film group to develop a process. Sample must be compatible with plating bath. Seed metal layer required to run electroplating process.

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk) * To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@danchip.dtu.dk)

Studies of Cu deposition processes

Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel