Specific Process Knowledge/Etch/DRIE-Pegasus/ProcessA/PrA-1: Difference between revisions

Revision as of 12:56, 30 July 2018

**Process runs**
Date	Substrate Information		Process Information			SEM Images
Date	Wafer info	Exposed area	Conditioning	Recipe	Wafer ID	SEM Images
2/5-2016	4" Travka20 Wafer	20 % Si	3 minute TDESC clean	PrA-1, 80 cycles or 14:40 minutes	C03991.02
2/5-2016	4" Travka20 Wafer	20 % Si	3 minute TDESC clean	PrA-1, 80 cycles or 14:40 minutes	C03991.05
3/6-2016	4" Travka20 Wafer	20 % Si	3 minute TDESC clean	PrA-1, 80 cycles or 14:40 minutes	C04047.02
3/6-2016	4" Travka20 Wafer	20 % Si	3 minute TDESC clean	PrA-1, 80 cycles or 14:40 minutes	C04047.05

Revision as of 14:36, 15 June 2016 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,416 edits No edit summary ← Older edit		Revision as of 12:56, 30 July 2018 view source Jmli (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers 4,416 edits No edit summary Newer edit →
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