Specific Process Knowledge/Etch/ICP Metal Etcher/silicon: Difference between revisions

From LabAdviser
Jmli (talk | contribs)
Jmli (talk | contribs)
No edit summary
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon click here]'''  
<!--Checked for updates on 2/2-2016 - ok/jmli -->
<!--Checked for updates on 30/7-2018 - ok/jmli -->
== Silicon etching on the ICP Metal Etcher ==
== Silicon etching on the ICP Metal Etcher ==



Revision as of 12:53, 30 July 2018

Feedback to this page: click here

Silicon etching on the ICP Metal Etcher

In the primary silicon etcher at Danchip, the DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF6 as etch gas). Silicon is also etched by chlorine and bromine.