Specific Process Knowledge/Etch/DRIE-Pegasus/DUVetch/nBoost04: Difference between revisions
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Revision as of 12:50, 30 July 2018
Date | Substrate Information | Process Information | SEM Images | ||||||
---|---|---|---|---|---|---|---|---|---|
Wafer info | Mask | Material/ Exposed area | Tool / Operator | Conditioning | Recipe | Wafer ID | Comments | ||
24/10-2014 | 4" DUV-BoxC wafer | stepper mask (50 nm barc + 250 nm krf)/Si | Si / 60+ % on die | Pegasus/jmli | 3 minute TDESC clean + 30 sec barc etch | danchip/jml/nano/nanoboost/nboost04 100 cycles or 13 minutes | S004436 |
HiRes images of S004436