Specific Process Knowledge/Etch/DRIE-Pegasus/FAQ/Masks: Difference between revisions

From LabAdviser
Jmli (talk | contribs)
No edit summary
Jmli (talk | contribs)
No edit summary
Line 1: Line 1:
<!--Checked for updates on 3/2-2016 - ok/jmli -->
<!--Checked for updates on 30/7-2018 - ok/jmli -->


'''Feedback to this page:  
'''Feedback to this page:  

Revision as of 12:39, 30 July 2018


Feedback to this page: click here

Question 1
I remember you said that you don't like Al as masking material because it will get sputtered off (am I right?) - but what about ALD deposited aluminium oxide - it is, as far as I know, much harder and resistant than Al..?
Answer 1
We don't have experience with ALD deposited aluminium oxide as a mask, however for some ESC configurations we have seen evidence of sputtering of the alumina uniformity shield surrounding the wafer; this would lead me to believe that the ALD aluminium oxide could still sputter and cause contamination issues.

Source: Kerry Roberts, SPTS