Specific Process Knowledge/Thin film deposition/Temescal: Difference between revisions

@@ Line 59: / Line 59: @@
 *Possible to modify deposition by Ar ion bombardment
 |-
-!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance
+!style="background:silver; color:black" align="left" valign="top" rowspan="4"|Performance
 |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
 *10Å - 1µm* (for some materials)
@@ Line 66: / Line 66: @@
 |style="background:WhiteSmoke; color:black"|
 *0.5Å/s - 10Å/s
+|-
+|style="background:LightGrey; color:black"|Thickness uniformity
+|style="background:WhiteSmoke; color:black"|
+*up to 3 % Wafer-in-Wafer variation **
+*up to 2 % Wafer-to-Wafer and Batch-to-Batch variation **
+|-
+|style="background:LightGrey; color:black"|Thickness accuracy
+|style="background:WhiteSmoke; color:black"|
+*May vary by up to about +/- 10 %
+*Less accurate for films below 20 nm
 |-
 !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
@@ Line 103: / Line 113: @@
 '''*''' ''For thicknesses above 600 nm please request permission so we can ensure that enough material will be present.''
+'''**''' ''Defined as the ratio of the standard deviation to the average of the measurement made using the DektakXT''