Jump to content

Specific Process Knowledge/Etch/DryEtchProcessing/Comparison: Difference between revisions

Jmli (talk | contribs)
Jmli (talk | contribs)
No edit summary
Line 22: Line 22:
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed.
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed.
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides
| style="background:WhiteSmoke; color:black" colspan"2" | Silicon etching
| style="background:WhiteSmoke; color:black" colspan="2" | Silicon etching
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates
Line 30: Line 30:
! style="background:lightgrey; color:black" | Alternative/backup uses
! style="background:lightgrey; color:black" | Alternative/backup uses
| style="background:lightgrey; color:black" | Backup silicon etcher
| style="background:lightgrey; color:black" | Backup silicon etcher
| style="background:lightgrey; color:black" colspan"2"  |  
| style="background:lightgrey; color:black" colspan="2"  |  
| style="background:lightgrey; color:black" | Barc etch
| style="background:lightgrey; color:black" | Barc etch
| style="background:lightgrey; color:black" | Silicon etcher
| style="background:lightgrey; color:black" | Silicon etcher
Line 41: Line 41:
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" |  Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" colspan"2" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
| style="background:WhiteSmoke; color:black" colspan="2" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes
Line 51: Line 51:
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C  
| style="background:lightgrey; color:black" colspan"2" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C  
| style="background:lightgrey; color:black" colspan="2" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C  
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C
Line 60: Line 60:
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" colspan"2" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" colspan="2" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC)
| style="background:WhiteSmoke; color:black" | No clamping
| style="background:WhiteSmoke; color:black" | No clamping