Specific Process Knowledge/Etch/DRIE-Pegasus/TrenchCharacterisation: Difference between revisions
| Line 2: | Line 2: | ||
= | = Characterization of DRIE silicon trenches = | ||
The challenge is | Deep silicon trenches come in many sizes and shapes. The best way of characterizing them is to cleave the wafer perpendicular to the trench and inspect the profile in an SEM or optical microscope. In the SEM the challenge is to get the best information possible about the profile with as little effort as possible. The information acquired must be simple and useful. Below is an example. | ||
[[File:etched profiles (3).PNG| | [[File:etched profiles (3).PNG|1000px]] | ||
=== Input parameters === | === Input parameters === | ||