Specific Process Knowledge/Etch/III-V ICP/InP-InGaAsP-InGaAs

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InP/InGaAsP/InGaAs etch

Unselective etch for large sized features and small aspect ratios by David Larsson, DTU Photonics, 2011

Recipe	InP Etch 1/InP Precond 1
Cl2 flow	20 sccm
N2 flow	40 sccm
Ar flow	10 sccm
Platen power	100 W
Coil power	500 W
Pressure	2 mTorr
Platen chiller temperature	180 oC
Comment	Use SiO2 carrier (not Si) (Kabi/Bghe June 2018)

Results (InP Etch 1)
Etch rate	500-600 nm/min
Sidewall angle	86-87 o
Selectivity (InP:SiO2, InP:HSQ)	50:1

• Result of InP etching. David Larsson, DTU Photonics, 2011
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InP etching June 2018

Sample pattern before etching

• Result of InP etching.
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  Top view of the SiO2 mask before etching
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  Top view of the SiO2 mask before etching

Etching of an InP piece on Si carrier

InP piece patterned with SiO2. The piece was etched on top of a Si wafer without bonding. The recipe "InP etch" was used. The roughness looks high in the bottom of the etched areas, especially in the large open areas.

• Result of InP etching.
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  low roughness in narrow trenched
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  low roughness in narrow trenched
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  A little higher roughnedd is larger trences
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  Much larger roughness in open areas
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  Zoom in on the large roughness
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  closed look at the large roughness in the open areas.

Etching of an InP piece on SiO2 carrier

InP piece patterned with SiO2. The piece was etched on top of a Si wafer coated with SiO2 without bonding. The recipe "InP etch" was used. The roughness looks low in the bottom of the etched areas, even in the large open areas.

• Result of InP etching.
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  Top view: oxide is gone on the narrow lines, low roughness in the trenches.
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  Top view: low roughness in the trenches.
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  30 dg view: low roughness in the trenches
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  30 dg view: low roughness in the trenches
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  Top view: low roughness in trench and in the large area

Changing the Cl2/N2 ratio

• Result of InP etching.
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