Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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* For standard processes better than 3 % across a 150 mm wafer. | * For standard processes better than 3 % across a 150 mm wafer. | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range | ||