Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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* Ar: 0 to 283 sccm | * Ar: 0 to 283 sccm | ||
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|style="background: | |style="background:whitesmoke; color:black"|Pressure and temperature | ||
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* Pressure range 4 to 250 mTorr | * Pressure range 4 to 250 mTorr | ||
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|style="background:LightGrey; color:black"|Process options | |style="background:LightGrey; color:black"|Process options | ||
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* Bosch processes with etch and dep cycles possibly split into three individually controllable parts | * Bosch processes with etch and dep cycles possibly split into three individually controllable parts | ||
* Parameter ramping during process steps | * Parameter ramping during process steps | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||
|style="background: | |style="background:whitesmoke; color:black"|Batch size | ||
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*<nowiki>#</nowiki> small samples on carriers | *<nowiki>#</nowiki> small samples on carriers | ||
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*<nowiki>#</nowiki> 150 mm wafers: 1 wafer | *<nowiki>#</nowiki> 150 mm wafers: 1 wafer | ||
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| style="background: | | style="background:Lightgrey; color:black"|Allowed materials | ||
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* Silicon wafers | * Silicon wafers | ||
* Quartz wafers need a (semi)conducting layer for clamping | * Quartz wafers need a (semi)conducting layer for clamping | ||