Specific Process Knowledge/Thin film deposition/Deposition of TiW: Difference between revisions
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This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see [[Sputtering of TiW in Wordentec|here]]) and may change with these settings. | This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see [[/Sputtering of TiW in Wordentec|here]]) and may change with these settings. | ||
Revision as of 09:54, 29 August 2008
Deposition of TiW alloy can take place in the Wordentec.
| Sputter deposition (Wordentec) | |
|---|---|
| Batch size |
|
| Pre-clean | RF Ar clean |
| Layer thickness | . |
| Deposition rate | Depending on process parameters, see here. |
This is done by a sputtering process. Process parameters (argon pressure and effect) can be varied, the surface roughness and the deposition rate (see here) and may change with these settings.