Specific Process Knowledge/Etch/DRIE-Pegasus: Difference between revisions
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*[[Specific Process Knowledge/Etch/DRIE-Pegasus/Claritas|Addition of a Claritas optical endpoint system in June 2018]] | *[[Specific Process Knowledge/Etch/DRIE-Pegasus/Claritas|Addition of a Claritas optical endpoint system in June 2018]] | ||
{| border="2" cellspacing="0" cellpadding="0" align="center" | |||
! colspan="2" style="background:silver; color:black" | | |||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ASE_(Advanced_Silicon_Etch)| ASE]] | |||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/AOE_(Advanced_Oxide_Etch)| AOE]] | |||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/DRIE-Pegasus| DRIE-Pegasus 1]] | |||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/ICP_Metal_Etcher| ICP Metal etch ]] | |||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/III-V RIE |III-V RIE ]] | |||
! style="background:silver; color:black" | [[Specific Process Knowledge/Etch/III-V ICP|III-V ICP]] | |||
|- valign="top" | |||
! rowspan="2" style="background:silver; color:black" width="120" |Purpose | |||
! style="background:WhiteSmoke; color:black" | Primary uses | |||
| style="background:WhiteSmoke; color:black"| Formerly the primary silicon etcher; now polymers, Silicon oxides and nitrides may also be etched. 5% metal on the surface is allowed. | |||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxides or nitrides | |||
| style="background:WhiteSmoke; color:black"| Silicon etching | |||
| style="background:WhiteSmoke; color:black"| Standard recipes for etching of Al, Cr and Ti, now also etches of W, TiW and Mo | |||
| style="background:WhiteSmoke; color:black"| Etching of silicon oxide, resist, BCB, silicon nitride, InP, InGaAs and GaAs on III-V substrates | |||
| style="background:WhiteSmoke; color:black"| Etching of III-V materials such as GaN, InP/InGaAsP/InGaAs, AlGaAs, GaAs | |||
|- valign="top" | |||
! style="background:lightgrey; color:black" | Alternative/backup uses | |||
| style="background:lightgrey; color:black" | Backup silicon etcher | |||
| style="background:lightgrey; color:black" | | |||
| style="background:lightgrey; color:black" | Barc etch | |||
| style="background:lightgrey; color:black" | Silicon etcher | |||
| style="background:lightgrey; color:black" | | |||
| style="background:lightgrey; color:black" | | |||
|- valign="top" | |||
! rowspan="7" style="background:silver; color:black" | General description | |||
! style="background:WhiteSmoke; color:black" | Plasma source | |||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | |||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | |||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil (with outer and inner coil) and platen generator | |||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | |||
| style="background:WhiteSmoke; color:black" | Parallel plate capacitor setup with RF power between the two electrodes | |||
| style="background:WhiteSmoke; color:black" | Inductively coupled plasma chamber with two RF generators; the coil and platen generator | |||
|-valign="top" | |||
! style="background:lightgrey; color:black" | Substrate cooling/temperature | |||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 20<sup>o</sup>C | |||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 60<sup>o</sup>C | |||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -20<sup>o</sup>C to 30<sup>o</sup>C | |||
| style="background:lightgrey; color:black" | The electrode is oil cooled. Also, Helium backside cooling: -10<sup>o</sup>C to 50<sup>o</sup>C | |||
| style="background:lightgrey; color:black" | The electrode is oil cooled: Fixed at 20<sup>o</sup>C | |||
| style="background:lightgrey; color:black" | The electrode is oil cooled with a special chiller. Also, Helium backside cooling: 20<sup>o</sup>C to 180<sup>o</sup>C | |||
|-valign="top" | |||
! style="background:WhiteSmoke; color:black" | Clamping | |||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (semco electrode) | |||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC) | |||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC) | |||
| style="background:WhiteSmoke; color:black" | Electrostatic clamping (TDESC) | |||
| style="background:WhiteSmoke; color:black" | No clamping | |||
| style="background:WhiteSmoke; color:black" | Mechanical clamping (weighted clamp with ceramic fingers) | |||
|} | |||
|- | |||
|} | |||
== General Pegasus information == | == General Pegasus information == | ||